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A 4 GHz GaAs FET Power Amplifier
Ismail Mazlan

Advisor: Dr. S. N. Prasad

The purpose of this project was to design, build and test a single-stage MESFET Power Amplifier from 3.7 to 4.2 GHz having a gain of 12.5 dB and output power of 14 dBm. The transistor used in the design was NE 76084 (NEC). The amplifier was designed using Cripp's theory for maximum linear power. The large signal model of the FET was used in the Output power simulations. The small signal performance simulations were done using small signal model of the FET. The simulations were carried out using EEsof Libra and Academy CAE software packages. The amplifier design was optimized using manual tuning and optimization procedures provided by EEsof Libra. The amplifier including the DC-bias circuitry was built using hybrid Microwave Integrated Circuit (MIC) techniques on RF-Duroid (er="2".2) circuit board. The amplifier was tested using a Network Analyzer.

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