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4 GHz GaAs FET Low-Noise Amplifier
Abdul Hisham Mohd Arif & Nor Azman Azit
Advisor: Dr. S.N. Prasad

The purpose of this project is to design, build, and test a single-state GaAs FET Low-Noise Amplifier from 3.7 to 4.2GHz having a gain of 10dB and noise-figure of less than or equal to 1.5dB. The transistor used in the design was NE 72084. Impedance matching networks at the input and output were designed to give low noise-figure and desired gain respectively. The low-noise amplifier (LNA) was designed in the hybrid Microwave Integrated Circuit (MIC) form on a RT-Duroid substrate. The design process utilized EEsof Touchstone and Academy CAD packages.
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