|
4 GHz GaAs FET Low-Noise Amplifier
by
Abdul Hisham Mohd Arif & Nor Azman Azit
Advisor: Dr. S.N. Prasad
The purpose of this project is to design, build, and test a single-state
GaAs FET Low-Noise Amplifier from 3.7 to 4.2GHz having a gain of 10dB and
noise-figure of less than or equal to 1.5dB. The transistor used in the
design was NE 72084. Impedance matching networks at the input and output
were designed to give low noise-figure and desired gain respectively. The
low-noise amplifier (LNA) was designed in the hybrid Microwave Integrated
Circuit (MIC) form on a RT-Duroid substrate. The design process utilized
EEsof Touchstone and Academy CAD packages.
|
