A Microwave Push-Pull Distributed Amplifier
The design of a microwave push-pull distributed amplifier using GaAs FET
transistors will be presented. The amplifier is designed to be constructed
as a hybrid microwave circuit. The circuit will use an alumina substrate
for the microstrip interconnections, and the FET devices are constructed
on a GaAs substrate. The s-parameters of the FET device have been de-embedded
from composite measured s-parameter data provided by Northrop Corporate.
Utilizing this data, the input and output admittances are determined, and
the device input and output capacitances are computed. The unit and output
circuitry depends upon these capacitances values. These circuits are designed
to provide simulated transmission lines which must have similar cutoff
frequencies. The design and performance has been simulated using EEsof
Libra and Academy software packages.
Advisor: Dr. S. N. Prasad